BFR35AP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR35AP
Código: GE_GEs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4900 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFR35AP
BFR35AP Datasheet (PDF)
bfr35ap.pdf
BFR 35APNPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emit
bfr35ap.pdf
BFR35APLow Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR35AP GEs SOT
bfr35ap.pdf
isc Silicon NPN RF Transistor BFR35APDESCRIPTIONLow Noise FigureNF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHzCE CHigh GainS 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion broadband amplifiers andoscillators.ABSOLUTE MAXIMUM R
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050