BFR35AP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFR35AP

Código: GE_GEs

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.28 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4900 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT23

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BFR35AP datasheet

 ..1. Size:19K  siemens
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BFR35AP

BFR 35AP NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emit

 ..2. Size:602K  infineon
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BFR35AP

BFR35AP Low Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR35AP GEs SOT

 ..3. Size:209K  inchange semiconductor
 bfr35ap.pdf pdf_icon

BFR35AP

isc Silicon NPN RF Transistor BFR35AP DESCRIPTION Low Noise Figure NF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHz CE C High Gain S 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIMUM R

Otros transistores... BFR27, BFR28, BFR280, BFR280W, BFR34, BFR34A, BFR35, BFR35A, BC556, BFR35AR, BFR36, BFR36A, BFR37, BFR38, BFR39, BFR39TO5, BFR40