BFR35AP Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR35AP
SMD Transistor Code: GE_GEs
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.28 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4900 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
BFR35AP Transistor Equivalent Substitute - Cross-Reference Search
BFR35AP Datasheet (PDF)
bfr35ap.pdf
BFR 35APNPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emit
bfr35ap.pdf
BFR35APLow Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR35AP GEs SOT
bfr35ap.pdf
isc Silicon NPN RF Transistor BFR35APDESCRIPTIONLow Noise FigureNF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHzCE CHigh GainS 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion broadband amplifiers andoscillators.ABSOLUTE MAXIMUM R
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BFR79TO5
