BFR35AP Specs and Replacement
Type Designator: BFR35AP
SMD Transistor Code: GE_GEs
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.28 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4900 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT23
BFR35AP Substitution
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BFR35AP datasheet
BFR 35AP NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emit... See More ⇒
BFR35AP Low Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR35AP GEs SOT... See More ⇒
isc Silicon NPN RF Transistor BFR35AP DESCRIPTION Low Noise Figure NF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHz CE C High Gain S 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: BFR27, BFR28, BFR280, BFR280W, BFR34, BFR34A, BFR35, BFR35A, BC556, BFR35AR, BFR36, BFR36A, BFR37, BFR38, BFR39, BFR39TO5, BFR40
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