BFS483 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFS483
Código: RHs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.065 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar BFS483
BFS483 Datasheet (PDF)
bfs483.pdf
BFS 483NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 483 RHs Q62702-F1574 1/4 = B 2/5
bfs483.pdf
BFS483Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at4 collector currents from 2 mA to 30 mA53621 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Two (galvanic) internal isolated Transistor in one package For orientation in reel see package information below Pb-free (RoHS compliant) and halogen-free package with visib
bfs482.pdf
BFS 482NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 482 RGs Q62702-F1573 1/4 = B
bfs481.pdf
BFS 481NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA fT = 8 GHz F = 1.4 dB at 900 MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 481 RFs Q62702-F1572 1/4 =
bfs480.pdf
BFS 480NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7GHz F = 1.5dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Conf
bfs481.pdf
BFS481Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at4 collector currents from 0.5 mA to 12 mA53621 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package For orientation in reel see package information below Easy to use Pb-free (RoHS compliant) and halogen free indu
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
