BFT25R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFT25R
Código: V4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.03 W
Tensión colector-base (Vcb): 8 V
Tensión colector-emisor (Vce): 5 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1200 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFT25R
BFT25R Datasheet (PDF)
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DISCRETE SEMICONDUCTORS DATA SHEETBFT25NPN 2 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationNPN 2 GHz wideband transistor BFT25DESCRIPTION PINNINGNPN transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: V1pIt is primarily intended for use in RF 1 baselfpage 3low power amplifiers, such as in 2 emitterpo
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BFT25ANPN 5 GHz wideband transistorRev. 04 6 July 2004 Product data sheet1. Product profile1.1 General descriptionThe BFT25A is a silicon NPN transistor, primarily intended for use in RF low poweramplifiers, such as pocket telephones and paging systems with signal frequencies upto 2 GHz.The transistor is encapsulated in a 3-pin plastic SOT23 envelope.1.2 Features Low cur
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