BFT25R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFT25R

Código: V4

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.03 W

Tensión colector-base (Vcb): 8 V

Tensión colector-emisor (Vce): 5 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1200 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT23

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BFT25R datasheet

 9.1. Size:83K  philips
 bft25a cnv 3.pdf pdf_icon

BFT25R

DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor December 1997 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A FEATURES PINNING Low current consumption PIN DESCRIPTION (100 A - 1 mA) Code V10 Low noise figure 1 base Gold metallization ensures 2

 9.2. Size:204K  philips
 bft25 cnv.pdf pdf_icon

BFT25R

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base lfpage 3 low power amplifiers, such as in 2 emitter po

 9.3. Size:51K  philips
 bft25 cnv 2.pdf pdf_icon

BFT25R

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor November 1992 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base fpage 3 low po

 9.4. Size:93K  philips
 bft25a.pdf pdf_icon

BFT25R

BFT25A NPN 5 GHz wideband transistor Rev. 04 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features Low cur

MOSTRAR MÁS

Otros transistores... BFT19A, BFT19B, BFT20, BFT21, BFT22, BFT23, BFT24, BFT25, 8050, BFT26, BFT27, BFT28, BFT28A, BFT28B, BFT28C, BFT29, BFT30