BFT33 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFT33
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar BFT33
BFT33 Datasheet (PDF)
bft33l.pdf
BFT33LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can be
bft33b.pdf
BFT33BDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
bft33a.pdf
BFT33AMECHANICAL DATADimensions in mm(inches)NPN SILICON TRANSISTOR8.89 (0.35)9.40 (0.37)7.75 (0.305)8.51 (0.335)FEATURES6.10 (0.240)6.60 (0.260) FAST SWITCHING HIGH PULSE POWER0.89(0.035)max.12.70(0.500)0.41 (0.016)min.0.53 (0.021)dia.5.08 (0.200)typ.APPLICATIONS POWER SWITCHING CIRCUITS2.542(0.100)1 3 MOTOR CONTROL0.66 (0
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
