BFT33 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFT33
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
BFT33 Transistor Equivalent Substitute - Cross-Reference Search
BFT33 Datasheet (PDF)
bft33l.pdf
BFT33LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can be
bft33b.pdf
BFT33BDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
bft33a.pdf
BFT33AMECHANICAL DATADimensions in mm(inches)NPN SILICON TRANSISTOR8.89 (0.35)9.40 (0.37)7.75 (0.305)8.51 (0.335)FEATURES6.10 (0.240)6.60 (0.260) FAST SWITCHING HIGH PULSE POWER0.89(0.035)max.12.70(0.500)0.41 (0.016)min.0.53 (0.021)dia.5.08 (0.200)typ.APPLICATIONS POWER SWITCHING CIRCUITS2.542(0.100)1 3 MOTOR CONTROL0.66 (0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
