BFT93
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFT93
Código: X1_X1p
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.025
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4000
MHz
Capacitancia de salida (Cc): 1.4
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BFT93
BFT93
Datasheet (PDF)
..1. Size:41K philips
bft93 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT93PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT93DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: X1pIt is primarily intended for use in RF1 basefpage 3wideba
..2. Size:193K philips
bft93 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT93PNP 5 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFT93DESCRIPTION PINNINGPNP transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: X1pIt is primarily intended for use in RF 1 baselfpage 3wideband amplifiers, such as in aerial 2 emitt
..3. Size:58K siemens
bft93.pdf
BFT 93PNP Silicon RF Transistor For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 93 X1s Q62702-F1063 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO
0.1. Size:1099K philips
bft93w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT93WPNP 4 GHz wideband transistorProduct specification March 1994Supersedes data of November 1992NXP Semiconductors Product specificationPNP 4 GHz wideband transistor BFT93WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3handbook, 2 columnsSOT323 (S-mini) package. The Gold metallization ensures B
0.2. Size:100K philips
bft93w 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT93WPNP 4 GHz wideband transistorMarch 1994Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationPNP 4 GHz wideband transistor BFT93WFEATURES DESCRIPTIONhandbook, 2 columns High power gain Silicon PNP transistor in a plastic, 3
Otros transistores... 2SA1771
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.