2N31 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V

2N3174Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

WPT2N31 WPT2N31 Http://www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter satu

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS DR

isc Silicon PNP Power Transistor 2N3198DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3186DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3171HDESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2N3184DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3196DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3173DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

isc Silicon PNP Power Transistor 2N3185DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3172DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

isc Silicon PNP Power Transistor 2N3174DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

isc Silicon PNP Power Transistor 2N3195DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3183DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2N3171DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C