2N31. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N31 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N31
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.007 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 22
   Paquete / Cubierta: TO7

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2N31 PDF detailed specifications

0.1. Size:354K rca
2n3118.pdf pdf_icon

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0.2. Size:418K rca
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0.3. Size:387K general electric
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0.4. Size:327K general electric
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0.5. Size:144K semelab
2n3114csm.pdf pdf_icon

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V... See More ⇒

0.6. Size:12K semelab
2n3174.pdf pdf_icon

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

0.7. Size:143K microelectronics
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0.8. Size:1363K willsemi
wpt2n31.pdf pdf_icon

WPT2N31 WPT2N31 Http //www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter satu... See More ⇒

0.9. Size:500K way-on
wm02n31m.pdf pdf_icon

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS D R ... See More ⇒

0.10. Size:171K inchange semiconductor
2n3198.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3198 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.11. Size:171K inchange semiconductor
2n3186.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3186 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.12. Size:196K inchange semiconductor
2n3171h.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3171H DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIM... See More ⇒

0.13. Size:171K inchange semiconductor
2n3184.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3184 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.14. Size:171K inchange semiconductor
2n3196.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.15. Size:173K inchange semiconductor
2n3173.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3173 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

0.16. Size:171K inchange semiconductor
2n3185.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3185 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.17. Size:173K inchange semiconductor
2n3172.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3172 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

0.18. Size:173K inchange semiconductor
2n3174.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3174 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

0.19. Size:171K inchange semiconductor
2n3195.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3195 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.20. Size:171K inchange semiconductor
2n3183.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3183 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

0.21. Size:204K inchange semiconductor
2n3171.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3171 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

Otros transistores... 2N308 , 2N3080 , 2N3081 , 2N3081-46 , 2N3081-51 , 2N3082 , 2N3083 , 2N309 , 13009 , 2N310 , 2N3107 , 2N3108 , 2N3109 , 2N311 , 2N3110 , 2N3110S , 2N3114 .