2N31. Аналоги и основные параметры
Наименование производителя: 2N31
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.007 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hFE): 22
Корпус транзистора: TO7
Аналоги (замена) для 2N31
- подборⓘ биполярного транзистора по параметрам
2N31 даташит
0.5. Size:144K semelab
2n3114csm.pdf 
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V
0.6. Size:12K semelab
2n3174.pdf 
2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
0.8. Size:1363K willsemi
wpt2n31.pdf 
WPT2N31 WPT2N31 Http //www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter satu
0.9. Size:500K way-on
wm02n31m.pdf 
WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS D R
0.10. Size:171K inchange semiconductor
2n3198.pdf 
isc Silicon PNP Power Transistor 2N3198 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.11. Size:171K inchange semiconductor
2n3186.pdf 
isc Silicon PNP Power Transistor 2N3186 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.12. Size:196K inchange semiconductor
2n3171h.pdf 
isc Silicon PNP Power Transistor 2N3171H DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIM
0.13. Size:171K inchange semiconductor
2n3184.pdf 
isc Silicon PNP Power Transistor 2N3184 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.14. Size:171K inchange semiconductor
2n3196.pdf 
isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.15. Size:173K inchange semiconductor
2n3173.pdf 
isc Silicon PNP Power Transistor 2N3173 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C
0.16. Size:171K inchange semiconductor
2n3185.pdf 
isc Silicon PNP Power Transistor 2N3185 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.17. Size:173K inchange semiconductor
2n3172.pdf 
isc Silicon PNP Power Transistor 2N3172 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C
0.18. Size:173K inchange semiconductor
2n3174.pdf 
isc Silicon PNP Power Transistor 2N3174 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C
0.19. Size:171K inchange semiconductor
2n3195.pdf 
isc Silicon PNP Power Transistor 2N3195 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.20. Size:171K inchange semiconductor
2n3183.pdf 
isc Silicon PNP Power Transistor 2N3183 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
0.21. Size:204K inchange semiconductor
2n3171.pdf 
isc Silicon PNP Power Transistor 2N3171 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C
Другие транзисторы: 2N308, 2N3080, 2N3081, 2N3081-46, 2N3081-51, 2N3082, 2N3083, 2N309, 13009, 2N310, 2N3107, 2N3108, 2N3109, 2N311, 2N3110, 2N3110S, 2N3114
