BFY90QF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFY90QF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1000 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: LCC3

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BFY90QF datasheet

 9.1. Size:140K  comset
 bfy90-bfx89.pdf pdf_icon

BFY90QF

BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide

 9.2. Size:10K  semelab
 bfy90dcsm.pdf pdf_icon

BFY90QF

BFY90DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 15V CEO 6.22 0.13 A = 1.27 0.13 I = 0.025A C (0.

 9.3. Size:54K  semelab
 smlbfy90.pdf pdf_icon

BFY90QF

SILICON PLANAR EPITAXIAL NPN Semelab Limited TRANSISTOR SMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector - Base Voltage 30V VCER Collector - Emitter Voltage (RBE 50 ) 30V VCEO Collector - Emitter Voltage 15V VEBO Emitter - Base Voltage 2.5V IC(AV) Average

Otros transistores... BFY87R, BFY87V, BFY87W, BFY87Y, BFY88, BFY90, BFY90B, BFY90CSM, 431, BFY91, BFY92, BFY94, BFY95, BFY99, BFYP99, BFZ10, BJ1A