BFY90QF Specs and Replacement
Type Designator: BFY90QF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: LCC3
BFY90QF Substitution
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BFY90QF datasheet
BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide ... See More ⇒
BFY90DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 15V CEO 6.22 0.13 A = 1.27 0.13 I = 0.025A C (0.... See More ⇒
SILICON PLANAR EPITAXIAL NPN Semelab Limited TRANSISTOR SMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector - Base Voltage 30V VCER Collector - Emitter Voltage (RBE 50 ) 30V VCEO Collector - Emitter Voltage 15V VEBO Emitter - Base Voltage 2.5V IC(AV) Average ... See More ⇒
Detailed specifications: BFY87R, BFY87V, BFY87W, BFY87Y, BFY88, BFY90, BFY90B, BFY90CSM, 431, BFY91, BFY92, BFY94, BFY95, BFY99, BFYP99, BFZ10, BJ1A
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