BFY90QF Datasheet, Equivalent, Cross Reference Search
Type Designator: BFY90QF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: LCC3
BFY90QF Transistor Equivalent Substitute - Cross-Reference Search
BFY90QF Datasheet (PDF)
bfy90-bfx89.pdf
BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONSThe BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide
bfy90dcsm.pdf
BFY90DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 15V CEO6.22 0.13 A = 1.27 0.13I = 0.025A C(0.
smlbfy90.pdf
SILICON PLANAR EPITAXIAL NPN Semelab LimitedTRANSISTORSMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VCBO Collector - Base Voltage 30VVCER Collector - Emitter Voltage (RBE 50) 30VVCEO Collector - Emitter Voltage 15VVEBO Emitter - Base Voltage 2.5VIC(AV) Average
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
