BLV20 Todos los transistores

 

BLV20 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLV20
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 36 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 600 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: M174

 Búsqueda de reemplazo de transistor bipolar BLV20

 

BLV20 Datasheet (PDF)

 ..1. Size:66K  philips
blv20.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETBLV20VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV20DESCRIPTION QUICK REFERENCE DATAR.F. performance up to Th = 25 C in an unneutralized common-emitterN-P-N silicon planar epitaxialclass-B circuittransistor intended for use in class-A,B and C operated h.f. and

 0.1. Size:87K  philips
blv2045.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETBLV2045UHF power transistor1996 Nov 13Product specificationSupersedes data of 1996 Feb 09Philips Semiconductors Product specificationUHF power transistor BLV2045FEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures excellent reliabili

 0.2. Size:90K  philips
blv2047.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETM3D372BLV2047UHF power transistor1999 Jun 09Product specificationSupersedes data of 1999 Jan 28Philips Semiconductors Product specificationUHF power transistor BLV2047FEATURES PINNING - SOT468A Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1 collector Gold metallization ensures excellent reliabilit

 0.3. Size:47K  philips
blv2045n.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETBLV2045NUHF power transistor1997 Oct 23Objective specificationFile under Discrete Semiconductors, SC08bPhilips Semiconductors Objective specificationUHF power transistor BLV2045NFEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN DESCRIPTIONprofile1 collector Gold metallization ensures excellent r

 0.4. Size:160K  philips
blv2048.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORS DATA SHEETM3D374BLV2048UHF push-pull power transistor1999 Apr 23Preliminary specificationPhilips Semiconductors Preliminary specificationUHF push-pull power transistor BLV2048FEATURES PINNING - SOT494A Emitter ballasting resistors for optimum temperature PIN SYMBOL DESCRIPTIONprofile1 c collector 1 Gold metallization ensures excellent

 0.5. Size:82K  philips
blv2044.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETBLV2044UHF power transistor1996 Nov 14Product specificationSupersedes data of 1996 Feb 09Philips Semiconductors Product specificationUHF power transistor BLV2044FEATURES PINNING - SOT437A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures excellent reliabili

 0.6. Size:82K  philips
blv2045n 8.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETM3D171BLV2045NUHF power transistorPreliminary specification 2000 Feb 21Supersedes data of 1999 May 01Philips Semiconductors Preliminary specificationUHF power transistor BLV2045NFEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures ex

 0.7. Size:117K  philips
blv2042.pdf

BLV20
BLV20

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLV2042UHF power transistorProduct specification 2000 May 08Supersedes data of 1997 July 11Philips Semiconductors Product specificationUHF power transistor BLV2042FEATURES PINNING - SOT409A Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1, 4, 5 and 8 emitter Gold metallization ensures excellent

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History: CDQ10008

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