Биполярный транзистор BLV20 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BLV20
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 65 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 36 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 600 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: M174
BLV20 Datasheet (PDF)
blv20.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV20VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV20DESCRIPTION QUICK REFERENCE DATAR.F. performance up to Th = 25 C in an unneutralized common-emitterN-P-N silicon planar epitaxialclass-B circuittransistor intended for use in class-A,B and C operated h.f. and
blv2045.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV2045UHF power transistor1996 Nov 13Product specificationSupersedes data of 1996 Feb 09Philips Semiconductors Product specificationUHF power transistor BLV2045FEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures excellent reliabili
blv2047.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D372BLV2047UHF power transistor1999 Jun 09Product specificationSupersedes data of 1999 Jan 28Philips Semiconductors Product specificationUHF power transistor BLV2047FEATURES PINNING - SOT468A Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1 collector Gold metallization ensures excellent reliabilit
blv2045n.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV2045NUHF power transistor1997 Oct 23Objective specificationFile under Discrete Semiconductors, SC08bPhilips Semiconductors Objective specificationUHF power transistor BLV2045NFEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN DESCRIPTIONprofile1 collector Gold metallization ensures excellent r
blv2048.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D374BLV2048UHF push-pull power transistor1999 Apr 23Preliminary specificationPhilips Semiconductors Preliminary specificationUHF push-pull power transistor BLV2048FEATURES PINNING - SOT494A Emitter ballasting resistors for optimum temperature PIN SYMBOL DESCRIPTIONprofile1 c collector 1 Gold metallization ensures excellent
blv2044.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV2044UHF power transistor1996 Nov 14Product specificationSupersedes data of 1996 Feb 09Philips Semiconductors Product specificationUHF power transistor BLV2044FEATURES PINNING - SOT437A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures excellent reliabili
blv2045n 8.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D171BLV2045NUHF power transistorPreliminary specification 2000 Feb 21Supersedes data of 1999 May 01Philips Semiconductors Preliminary specificationUHF power transistor BLV2045NFEATURES PINNING - SOT390A Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1 c collector Gold metallization ensures ex
blv2042.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLV2042UHF power transistorProduct specification 2000 May 08Supersedes data of 1997 July 11Philips Semiconductors Product specificationUHF power transistor BLV2042FEATURES PINNING - SOT409A Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1, 4, 5 and 8 emitter Gold metallization ensures excellent
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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