BLV90-SL Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLV90-SL

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 36 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 900 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO131

 Búsqueda de reemplazo de BLV90-SL

- Selecciónⓘ de transistores por parámetros

 

BLV90-SL datasheet

 9.1. Size:54K  philips
 blv90.pdf pdf_icon

BLV90-SL

DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor February 1996 Product specification Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimum mobile radio transmitters in the 900 MHz band. temperature profile. gold

 9.2. Size:99K  philips
 blv909.pdf pdf_icon

BLV90-SL

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor 1999 Jun 25 Product specification Supersedes data of 1996 Nov 04 Philips Semiconductors Product specification UHF power transistor BLV909 FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum temperature PIN SYMBOL DESCRIPTION profile 1, 4, 5, 8 e emitter Gold metallization ensures excell

 9.3. Size:105K  philips
 blv904.pdf pdf_icon

BLV90-SL

DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor 1997 Jul 15 Product specification Supersedes data of 1996 Feb 08 Philips Semiconductors Product specification UHF power transistor BLV904 FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum PIN DESCRIPTION temperature profile 1, 4, 5, 8 emitter Gold metallization ensures excellent reliability

Otros transistores... BLV45, BLV45-12, BLV45A, BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BC546, BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95, BLV97, BLV98