BLV90-SL Specs and Replacement
Type Designator: BLV90-SL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO131
BLV90-SL Substitution
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BLV90-SL datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor February 1996 Product specification Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimum mobile radio transmitters in the 900 MHz band. temperature profile. gold ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor 1999 Jun 25 Product specification Supersedes data of 1996 Nov 04 Philips Semiconductors Product specification UHF power transistor BLV909 FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum temperature PIN SYMBOL DESCRIPTION profile 1, 4, 5, 8 e emitter Gold metallization ensures excell... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor 1997 Jul 15 Product specification Supersedes data of 1996 Feb 08 Philips Semiconductors Product specification UHF power transistor BLV904 FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum PIN DESCRIPTION temperature profile 1, 4, 5, 8 emitter Gold metallization ensures excellent reliability ... See More ⇒
Detailed specifications: BLV45, BLV45-12, BLV45A, BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BC546, BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95, BLV97, BLV98
Keywords - BLV90-SL pdf specs
BLV90-SL cross reference
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BLV90-SL substitution
BLV90-SL replacement
History: BUL310PI
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