BLV90-SL Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV90-SL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO131
BLV90-SL Transistor Equivalent Substitute - Cross-Reference Search
BLV90-SL Datasheet (PDF)
blv90.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV90UHF power transistorFebruary 1996Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV90DESCRIPTION FEATURESNPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimummobile radio transmitters in the 900 MHz band. temperature profile. gold
blv909.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLV909UHF power transistor1999 Jun 25Product specificationSupersedes data of 1996 Nov 04Philips Semiconductors Product specificationUHF power transistor BLV909FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1, 4, 5, 8 e emitter Gold metallization ensures excell
blv904.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV904UHF power transistor1997 Jul 15Product specificationSupersedes data of 1996 Feb 08Philips Semiconductors Product specificationUHF power transistor BLV904FEATURES PINNING - SOT409B Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1, 4, 5, 8 emitter Gold metallization ensures excellent reliability
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
