BLV93 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLV93

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 36 V

Corriente del colector DC máxima (Ic): 1.6 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 900 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: M118

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BLV93 datasheet

 ..1. Size:63K  philips
 blv93.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV93 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors for for use in mobile radio transmitters in the 900 MHz an optimum temperature

 0.1. Size:85K  philips
 blv935.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor 1995 Jun 29 Product specification Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION Emitter ballasting resistors for an optimum temperature NPN silicon planar epitaxial transistor intended for profile common emitter class-AB operation. The transistor has internal input matc

 0.2. Size:75K  philips
 blv934.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor 1995 Apr 11 Product specification Philips Semiconductors Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended for easy design of wideband circuits common emitter class-AB op

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