BLV93 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLV93
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 8 W
Tensión colector-base (Vcb): 36 V
Corriente del colector DC máxima (Ic): 1.6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 900 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: M118
Búsqueda de reemplazo de transistor bipolar BLV93
BLV93 Datasheet (PDF)
blv93.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV93UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV93DESCRIPTION FEATURESN-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors forfor use in mobile radio transmitters in the 900 MHz an optimum temperature
blv935.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV935UHF power transistor1995 Jun 29Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV935FEATURES DESCRIPTION Emitter ballasting resistors for an optimum temperature NPN silicon planar epitaxial transistor intended forprofile common emitter class-AB operation. The transistor hasinternal input matc
blv934.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV934UHF power transistor1995 Apr 11Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationUHF power transistor BLV934FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emitter class-AB op
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
