BLV93 Specs and Replacement

Type Designator: BLV93

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector Current |Ic max|: 1.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M118

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BLV93 datasheet

 ..1. Size:63K  philips

 blv93.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV93 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors for for use in mobile radio transmitters in the 900 MHz an optimum temperature ... See More ⇒

 0.1. Size:85K  philips

 blv935.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor 1995 Jun 29 Product specification Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION Emitter ballasting resistors for an optimum temperature NPN silicon planar epitaxial transistor intended for profile common emitter class-AB operation. The transistor has internal input matc... See More ⇒

 0.2. Size:75K  philips

 blv934.pdf pdf_icon

BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor 1995 Apr 11 Product specification Philips Semiconductors Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended for easy design of wideband circuits common emitter class-AB op... See More ⇒

Detailed specifications: BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BC558, BLV94, BLV95, BLV97, BLV98, BLV99, BLW10, BLW11, BLW12

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