BLV93 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV93
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 1.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: M118
BLV93 Transistor Equivalent Substitute - Cross-Reference Search
BLV93 Datasheet (PDF)
blv93.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV93UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV93DESCRIPTION FEATURESN-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors forfor use in mobile radio transmitters in the 900 MHz an optimum temperature
blv935.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV935UHF power transistor1995 Jun 29Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV935FEATURES DESCRIPTION Emitter ballasting resistors for an optimum temperature NPN silicon planar epitaxial transistor intended forprofile common emitter class-AB operation. The transistor hasinternal input matc
blv934.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV934UHF power transistor1995 Apr 11Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationUHF power transistor BLV934FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emitter class-AB op
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2005
