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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors 1999 Jun 01 Product specification Supersedes data of 1997 Mar 03 Philips Semiconductors Product specification NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 350 V). 1 base 2, 4 collector APPLICATION

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT223 NPN SILICON PLANAR BSP20 HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 T i V C i I T T E C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i V V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSP19AT1/D BSP19AT1 NPN Silicon BSP20AT1 Epitaxial Transistor Motorola Preferred Devices This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications

DISCRETE SEMICONDUCTORS DATA SHEET BSP205 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP205 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 60 V vertical D

DISCRETE SEMICONDUCTORS DATA SHEET BSP206 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13B Philips Semiconductors Product specification P-channel enhancement mode vertical BSP206 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 60 V vertical D

DISCRETE SEMICONDUCTORS DATA SHEET BSP204; BSP204A P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP204; BSP204A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDIT

SMD Type Transistors NPN Silicon Epitaxial Transistor BSP20A SOT-223 Unit mm 3.50+0.2 6.50+0.2 -0.2 -0.2 Features 0.90+0.2 -0.2 High Voltage V(BR)CEO of 250 and 350 Volts. 3.00+0.1 -0.1 7.00+0.3 -0.3 Available in 12 mm Tape and Reel 4 1 Base 2 Collector 1 2 3 0.70+0.1 -0.1 3 Emitter 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit