BSP20 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSP20
SMD Transistor Code: AT2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT89
BSP20 Transistor Equivalent Substitute - Cross-Reference Search
BSP20 Datasheet (PDF)
bsp19 bsp20.pdf
DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D087BSP19; BSP20NPN high-voltage transistors1999 Jun 01Product specificationSupersedes data of 1997 Mar 03Philips Semiconductors Product specificationNPN high-voltage transistors BSP19; BSP20FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 base2, 4 collectorAPPLICATION
bsp19 bsp20.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp20.pdf
SOT223 NPN SILICON PLANARBSP20HIGH VOLTAGE TRANSISTORISSUE 3 FEBRUARY 1996 T i V C i I T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i V V
bsp19at bsp20a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications
bsp205.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP205P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP205D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 60 Vvertical D
bsp206.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP206P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13BPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP206D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 60 Vvertical D
bsp204 bsp204a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP204; BSP204AP-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP204; BSP204AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDIT
bsp20a.pdf
SMD Type TransistorsNPN Silicon Epitaxial TransistorBSP20ASOT-223Unit: mm3.50+0.26.50+0.2 -0.2-0.2Features0.90+0.2-0.2High Voltage: V(BR)CEO of 250 and 350 Volts.3.00+0.1-0.17.00+0.3-0.3Available in 12 mm Tape and Reel41 Base2 Collector1 2 30.70+0.1-0.13 Emitter2.94.64 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
