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BSP20AT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP20AT1
   Código: SP20A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23
 

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BSP20AT1 Datasheet (PDF)

 8.1. Size:119K  motorola
bsp19at bsp20a.pdf pdf_icon

BSP20AT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications

 8.2. Size:39K  kexin
bsp20a.pdf pdf_icon

BSP20AT1

SMD Type TransistorsNPN Silicon Epitaxial TransistorBSP20ASOT-223Unit: mm3.50+0.26.50+0.2 -0.2-0.2Features0.90+0.2-0.2High Voltage: V(BR)CEO of 250 and 350 Volts.3.00+0.1-0.17.00+0.3-0.3Available in 12 mm Tape and Reel41 Base2 Collector1 2 30.70+0.1-0.13 Emitter2.94.64 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 9.1. Size:65K  philips
bsp205.pdf pdf_icon

BSP20AT1

DISCRETE SEMICONDUCTORSDATA SHEETBSP205P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP205D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 60 Vvertical D

 9.2. Size:48K  philips
bsp19 bsp20.pdf pdf_icon

BSP20AT1

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D087BSP19; BSP20NPN high-voltage transistors1999 Jun 01Product specificationSupersedes data of 1997 Mar 03Philips Semiconductors Product specificationNPN high-voltage transistors BSP19; BSP20FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 base2, 4 collectorAPPLICATION

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