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BSP20AT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP20AT1
   Código: SP20A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23
 

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BSP20AT1 datasheet

 8.1. Size:119K  motorola
bsp19at bsp20a.pdf pdf_icon

BSP20AT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSP19AT1/D BSP19AT1 NPN Silicon BSP20AT1 Epitaxial Transistor Motorola Preferred Devices This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications

 8.2. Size:39K  kexin
bsp20a.pdf pdf_icon

BSP20AT1

SMD Type Transistors NPN Silicon Epitaxial Transistor BSP20A SOT-223 Unit mm 3.50+0.2 6.50+0.2 -0.2 -0.2 Features 0.90+0.2 -0.2 High Voltage V(BR)CEO of 250 and 350 Volts. 3.00+0.1 -0.1 7.00+0.3 -0.3 Available in 12 mm Tape and Reel 4 1 Base 2 Collector 1 2 3 0.70+0.1 -0.1 3 Emitter 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.1. Size:65K  philips
bsp205.pdf pdf_icon

BSP20AT1

DISCRETE SEMICONDUCTORS DATA SHEET BSP205 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BSP205 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 60 V vertical D

 9.2. Size:48K  philips
bsp19 bsp20.pdf pdf_icon

BSP20AT1

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors 1999 Jun 01 Product specification Supersedes data of 1997 Mar 03 Philips Semiconductors Product specification NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 350 V). 1 base 2, 4 collector APPLICATION

Otros transistores... BSP15T1 , BSP15T3 , BSP16 , BSP16T1 , BSP16T3 , BSP19 , BSP19AT1 , BSP20 , D880 , BSP30 , BSP30T1 , BSP30T3 , BSP31 , BSP31T1 , BSP31T3 , BSP32 , BSP32T1 .

History: CSB737Q

 

 

 


 
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