Биполярный транзистор BSP20AT1
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BSP20AT1
Маркировка: SP20A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 300
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 15
MHz
Ёмкость коллекторного перехода (Cc): 10
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
SOT23
Аналоги (замена) для BSP20AT1
BSP20AT1
Datasheet (PDF)
8.1. Size:119K motorola
bsp19at bsp20a.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications
8.2. Size:39K kexin
bsp20a.pdf SMD Type TransistorsNPN Silicon Epitaxial TransistorBSP20ASOT-223Unit: mm3.50+0.26.50+0.2 -0.2-0.2Features0.90+0.2-0.2High Voltage: V(BR)CEO of 250 and 350 Volts.3.00+0.1-0.17.00+0.3-0.3Available in 12 mm Tape and Reel41 Base2 Collector1 2 30.70+0.1-0.13 Emitter2.94.64 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.1. Size:65K philips
bsp205.pdf DISCRETE SEMICONDUCTORSDATA SHEETBSP205P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP205D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 60 Vvertical D
9.2. Size:48K philips
bsp19 bsp20.pdf DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D087BSP19; BSP20NPN high-voltage transistors1999 Jun 01Product specificationSupersedes data of 1997 Mar 03Philips Semiconductors Product specificationNPN high-voltage transistors BSP19; BSP20FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 base2, 4 collectorAPPLICATION
9.3. Size:65K philips
bsp206.pdf DISCRETE SEMICONDUCTORSDATA SHEETBSP206P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13BPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP206D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 60 Vvertical D
9.4. Size:65K philips
bsp204 bsp204a cnv 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETBSP204; BSP204AP-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP204; BSP204AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDIT
9.5. Size:269K nxp
bsp19 bsp20.pdf Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.6. Size:42K diodes
bsp20.pdf SOT223 NPN SILICON PLANARBSP20HIGH VOLTAGE TRANSISTORISSUE 3 FEBRUARY 1996 T i V C i I T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i V V
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.