BSP50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP50
Código: AS1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.005 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar BSP50
BSP50 Datasheet (PDF)
bsp50 bsp51 bsp52.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BSP50; BSP51; BSP52NPN Darlington transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BSP50; BSP51; BSP52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Integrated diod
bsp50.pdf
BSP50NPN Darlington Transistor4 This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 VVE
bsp50 bsp51 bsp52.pdf
NPN Silicon Darlington Transistors BSP 50 BSP 52 High collector current Low collector-emitter saturation voltage Complementary types: BSP 60 BSP 62 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BSP 50 BSP 50 Q62702-P1163 B C E C SOT-223BSP 51 BSP 51 Q62702-P1164BSP 52 BSP 52 Q62702-P1165Maximum RatingsParameter Symbol Values Unit
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
