BSP50 - аналоги, параметры транзистора - Справочник транзисторов

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BSP50; BSP51; BSP52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diod

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BSP50 NPN Darlington Transistor 4 This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VE

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NPN Silicon Darlington Transistors BSP 50 BSP 52 High collector current Low collector-emitter saturation voltage Complementary types BSP 60 BSP 62 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BSP 50 BSP 50 Q62702-P1163 B C E C SOT-223 BSP 51 BSP 51 Q62702-P1164 BSP 52 BSP 52 Q62702-P1165 Maximum Ratings Parameter Symbol Values Unit

Другие транзисторы: BSP32T3, BSP33, BSP33T1, BSP33T3, BSP40, BSP41, BSP42, BSP43, BC547B, BSP51, BSP52, BSP52T1, BSP52T3, BSP60, BSP61, BSP62, BSP62T1