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BSS12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS12

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO18

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BSS12 Datasheet (PDF)

1.1. bss123lt1rev2x.pdf Size:93K _motorola

BSS12
BSS12

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS123LT1/D TMOS FET Transistor BSS123LT1 NChannel 3 DRAIN Motorola Preferred Device 1 GATE 3 ? 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 100 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp ? 50 s) VGSM 40 Vpk Dr

1.2. bss123lt1-d.pdf Size:58K _philips

BSS12
BSS12

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http://onsemi.com Features Pb-Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6 W N-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage 1 - Continuous VGS 20 Vdc - Non-repetitive (tp ? 50 ms) VGSM 40 Vpk Drain Current Adc 2 - Continuo

1.3. bss123 cnv 2.pdf Size:50K _philips

BSS12
BSS12

DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSS123 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MAX. UNIT etc. V

1.4. bss123.pdf Size:23K _philips

BSS12
BSS12

Philips Semiconductors Product specification N-channel TrenchMOS? transistor BSS123 Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Extremely fast switching VDSS = 100 V Logic level compatible Subminiature surface mounting ID = 150 mA package g RDS(ON) ? 6 ? (VGS = 10 V) s GENERAL DESCRIPTION PINNING SOT23 N-channel enhancement mode PIN DESCRIPTIO

1.5. bss100 bss123.pdf Size:58K _fairchild_semi

BSS12

EI ectri caI Characteri sti cs(TA = 25C unl ess ot herwi se not ed) Sept ember 1996 Symb?I Parameter C?ndi ti ?ns Type Min Typ Max Units OFF CHARACTERI STI CS BVDSS Drai n- Source Breakdown Vol t age VGS = 0 V, ID= 250 A All 100 V BSS100 IDSS Zero Gat e Vol t age Drai n Current VDS = 100 V,VGS= 0 V 15 A BSS100 / BSS123 VDS = 100 V,VGS= 0 V BSS123 1 A N ChanneI L?gi c LeveI Enhancemen

1.6. bss123.pdf Size:145K _fairchild_semi

BSS12
BSS12

June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.17 A, 100 V. RDS(ON) = 6? @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 10? @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize on-state resistance Hig

1.7. bss125.pdf Size:78K _siemens

BSS12
BSS12

BSS 125 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Marking BSS 125 600 V 0.1 A 45 ? TO-92 SS125 Type Ordering Code Tape and Reel Information BSS 125 Q62702-S021 E6288 BSS 125 Q67000-S008 E6296 BSS 125 Q67000-S233 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VD

1.8. bss124.pdf Size:78K _siemens

BSS12
BSS12

BSS 124 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 ? TO-92 SS 124 Type Ordering Code Tape and Reel Information BSS 124 Q67000-S172 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 400 V VDGR Drain-gate voltage RGS = 20 k? 400

1.9. bss123w.pdf Size:85K _diodes

BSS12
BSS12

BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Threshold Voltage Case: SOT323 Low Input Capacitance Case Material: Molded Plastic, "Green" Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram Hi

1.10. bss123.pdf Size:122K _diodes

BSS12
BSS12

BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low Gate Threshold Voltage Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakag

1.11. bss123.pdf Size:89K _infineon

BSS12
BSS12

BSS 123 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6 ? SOT-23 SAs Type Ordering Code Tape and Reel Information BSS 123 Q62702-S512 E6327 BSS 123 Q67000-S245 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Dra

1.12. bss129.pdf Size:294K _infineon

BSS12
BSS12

BSS 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.15 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance 3 2 Available grouped in VGS(th) 1 Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 129 Q62702-S015 E6288: 1500 pcs/reel; G D S SS 129 TO-92 2 reels/carton; gate first BSS 129 Q67000-S116 E6296: 1500 pcs/reel; 2 r

1.13. bss123.pdf Size:104K _wietron

BSS12
BSS12

BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 ? *Low On-Resistance : 6.0 GATE 1 *Low Input Capacitance: 20PF 2 *Low Out put Capacitance : 9PF 2 SOURCE *Low Threshole :2.8V *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Oth

1.14. bss123lt1.pdf Size:363K _willas

BSS12
BSS12

FM120-M WILLAS THRU BSS123LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V N-CHANNEL POWER MOSFET SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board spac

1.15. bss123n3.pdf Size:531K _cystek

BSS12
BSS12

Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp. Revised Date : 2014.08.21 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 100V ID@VGS=10V 1.7A BSS123N3 VGS=10V, ID=700mA 290mΩ VGS=4V, ID=400mA 310mΩ RDSON(TYP) VGS=10V, ID=170mA 260mΩ VGS=4V, ID=170mA 280mΩ Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resista

1.16. bss123.pdf Size:1613K _kexin

BSS12
BSS12

SMD Type MOSFET N-Channel MOSFET BSS123 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) 1 2 ● RDS(ON) < 6Ω (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1-0.01 ● RDS(ON) < 10Ω (VGS = 4.5V) +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit D

Otros transistores... BSR52 , BSR55 , BSR59 , BSR60 , BSR61 , BSR62 , BSS10 , BSS11 , BC327 , BSS13 , BSS14 , BSS15 , BSS16 , BSS17 , BSS18 , BSS19 , BSS20 .

 


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