BSS16 Todos los transistores

BSS169 SIPMOS Small-Signal-Transistor Product Summary Features VDS 100 V N-channel RDS(on),max 12 W Depletion mode IDSS,min 0.09 A dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating; RoHS compliant PG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Info

BSS169 100V N-Channel MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 234m @ 10V 267m @ 6V 100V 2A 0.118(3.00) 0.110(2.80) 278m @ 4.5V 3 0.055(1.40) 0.047(1.20) Features 1 2 0.079(2.00) - TrenchFET Power MOSFET 0.071(1.80) - Low RDS(ON). - Surface mount package. 0.007(0.150) 0.002(0.080) 0.041(1.05) 0.035(0.90) 0.100(2.55) Mechanical data 0.089(2.25) - Case SOT-23,

BSS169 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlighting