BSS16 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS16
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
BSS16 Transistor Equivalent Substitute - Cross-Reference Search
BSS16 Datasheet (PDF)
bss169.pdf
BSS169SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max 12 W Depletion modeIDSS,min 0.09 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101Type Package Pb-free Tape and Reel Info
bss169.pdf
BSS169100V N-Channel MOSFETV(BR)DSS RDS(on)MAXID SOT-23234m @ 10V267m @ 6V100V 2A0.118(3.00)0.110(2.80)278m @ 4.5V30.055(1.40)0.047(1.20)Features1 20.079(2.00) - TrenchFET Power MOSFET 0.071(1.80) - Low RDS(ON). - Surface mount package.0.007(0.150)0.002(0.080)0.041(1.05)0.035(0.90)0.100(2.55)Mechanical data0.089(2.25) - Case: SOT-23,
bss169.pdf
BSS169www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
