BSS16 Datasheet and Replacement
Type Designator: BSS16
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
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BSS16 Datasheet (PDF)
bss169.pdf

BSS169SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max 12 W Depletion modeIDSS,min 0.09 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101Type Package Pb-free Tape and Reel Info
bss169.pdf

BSS169100V N-Channel MOSFETV(BR)DSS RDS(on)MAXID SOT-23234m @ 10V267m @ 6V100V 2A0.118(3.00)0.110(2.80)278m @ 4.5V30.055(1.40)0.047(1.20)Features1 20.079(2.00) - TrenchFET Power MOSFET 0.071(1.80) - Low RDS(ON). - Surface mount package.0.007(0.150)0.002(0.080)0.041(1.05)0.035(0.90)0.100(2.55)Mechanical data0.089(2.25) - Case: SOT-23,
bss169.pdf

BSS169www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: ET5253 | GS111C | 2SB878 | KT8213A | 2SD1609C | MJ11012 | CXT2222A
Keywords - BSS16 transistor datasheet
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History: ET5253 | GS111C | 2SB878 | KT8213A | 2SD1609C | MJ11012 | CXT2222A



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