BSS81 Todos los transistores

 ..1. Size:157K  siemens
 bss79 bss81.pdf

NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types BSS 80, BSS 82 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BSS 79 B CEs Q62702-S503 B E C SOT-23 BSS 79 C CFs Q62702-S501 BSS 81 B CDs Q62702-S555 BSS 81 C CGs Q62702-S605 Maximum Ratings Parameter Symbol Values

 0.1. Size:150K  nxp
 pbss8110d.pdf

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3

 0.2. Size:135K  nxp
 pbss8110x.pdf

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 0.3. Size:123K  nxp
 pbss8110t.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag

 0.4. Size:163K  nxp
 pbss8110y.pdf

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati

 0.5. Size:137K  nxp
 pbss8110z.pdf

PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS9110Z. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curre

 0.6. Size:182K  infineon
 bss816nw.pdf

BSS816NW OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 160 m DS(on),max GS Enhancement mode V =1.8 V 240 GS Ultra Logic level (1.8V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT323 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package