BSS81 Datasheet. Specs and Replacement

Type Designator: BSS81  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 44

Noise Figure, dB: -

Package: TO236

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BSS81 datasheet

 ..1. Size:157K  siemens

bss79 bss81.pdf pdf_icon

BSS81

NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types BSS 80, BSS 82 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BSS 79 B CEs Q62702-S503 B E C SOT-23 BSS 79 C CFs Q62702-S501 BSS 81 B CDs Q62702-S555 BSS 81 C CGs Q62702-S605 Maximum Ratings Parameter Symbol Values ... See More ⇒

 0.1. Size:150K  nxp

pbss8110d.pdf pdf_icon

BSS81

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒

 0.2. Size:135K  nxp

pbss8110x.pdf pdf_icon

BSS81

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒

 0.3. Size:123K  nxp

pbss8110t.pdf pdf_icon

BSS81

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag... See More ⇒

Detailed specifications: BSS77, BSS78, BSS79, BSS79B, BSS79C, BSS80, BSS80B, BSS80C, BC557, BSS81B, BSS81C, BSS82, BSS82B, BSS82BL, BSS82C, BSS82CL, BSS99

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