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BST40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BST40
   Código: AT2
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT89
 

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BST40 Datasheet (PDF)

 ..1. Size:167K  nxp
bst39 bst40.pdf pdf_icon

BST40

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:12K  diodes
bst40.pdf pdf_icon

BST40

SOT89 NPN SILICON PLANARBST40HIGH VOLTAGE TRANSISTORISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE BST15CPARTMAKING DETAIL AT2ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 250 VEmitter-Base Voltage VEBO 5VPeak Pulse Current ICM 1AContinuous Collector Current IC 500 mAPower Diss

 ..3. Size:340K  htsemi
bst39 bst40.pdf pdf_icon

BST40

BST39,BST40 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Current1. BASE High Voltage2. COLLECTOR APPLICATIONS General Purpose Switching and Amplification 3. EMITTER MARKING:BCT39:AT1 BCT40:AT2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitBST39 400VCBO Collector-Base Voltage V BST40 300Collector-Emitter Voltage BST39 350VCEO V

 0.1. Size:48K  philips
bst39-bst40 4.pdf pdf_icon

BST40

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST39; BST40NPN high-voltage transistorsProduct specification 2000 Jul 03Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationNPN high-voltage transistors BST39; BST40FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 emitter2 collectorAPPLICATIONS

Otros transistores... BSS82B , BSS82BL , BSS82C , BSS82CL , BSS99 , BST15 , BST16 , BST39 , BC327 , BST50 , BST51 , BST52 , BST60 , BST61 , BST62 , BSV10 , BSV10-10 .

History: GT321B | 2SA1012D

 

 
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