BSV52
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSV52
Código: B2_B2p_B2t_B2W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar BSV52
BSV52
Datasheet (PDF)
..1. Size:50K philips
bsv52 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSV52NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor BSV52FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 12 V).1 base2 emitterAPPLICATIONS3 collector High speed
..2. Size:46K st
bsv52 so2369 so2369a.pdf
BSV52SO2369/SO2369ASMALL SIGNAL NPN TRANSISTORSType MarkingBSV52 B2SO2369 N11SO2369A N81 SILICON EPITAXIAL PLANAR NPN2TRANSISTORS MINIATURE PLASTIC PACKAGE FOR3APPLICATION IN SURFACE MOUNTING1CIRCUITS LOW CURRENT, FAST SWITCHINGSOT-23APPLICATIONS.INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSO2369/A BSV52V Collector-Emi
..3. Size:89K fairchild semi
bsv52.pdf
BSV52CESOT-23BMark: B2NPN Switching TransistorThis device is designed for high speed saturated switching atcollector currents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCES Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 5.0 VIC Collector C
..4. Size:177K nxp
bsv52.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
..5. Size:202K onsemi
bsv52.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:79K motorola
bsv52lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSV52LT1/DSwitching TransistorBSV52LT1COLLECTORNPN Silicon31BASE23EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 12 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 20 VdcCollector Current Continuous IC 100 mAdcTHERMAL CHARACTER
0.2. Size:108K onsemi
bsv52lt1-d.pdf
BSV52LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 12 VdcCollector-Base Voltage VCBO 20 Vdc2EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol
0.3. Size:70K onsemi
bsv52lt1g.pdf
BSV52LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 12 VdcCollector-Base Voltage VCBO 20 Vdc2EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max
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