BSV52 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor 1999 Apr 15 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 12 V). 1 base 2 emitter APPLICATIONS 3 collector High speed

BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 SO2369 N11 SO2369A N81 SILICON EPITAXIAL PLANAR NPN 2 TRANSISTORS MINIATURE PLASTIC PACKAGE FOR 3 APPLICATION IN SURFACE MOUNTING 1 CIRCUITS LOW CURRENT, FAST SWITCHING SOT-23 APPLICATIONS. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit SO2369/A BSV52 V Collector-Emi

BSV52 C E SOT-23 B Mark B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCES Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 5.0 V IC Collector C

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSV52LT1/D Switching Transistor BSV52LT1 COLLECTOR NPN Silicon 3 1 BASE 2 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 12 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 20 Vdc Collector Current Continuous IC 100 mAdc THERMAL CHARACTER

BSV52LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc 2 EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol

BSV52LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc 2 EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max