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BSV52R Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSV52R
   Código: B4
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 400 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO236
 

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BSV52R PDF detailed specifications

 9.1. Size:79K  motorola
bsv52lt1.pdf pdf_icon

BSV52R

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSV52LT1/D Switching Transistor BSV52LT1 COLLECTOR NPN Silicon 3 1 BASE 2 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 12 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 20 Vdc Collector Current Continuous IC 100 mAdc THERMAL CHARACTER... See More ⇒

 9.2. Size:50K  philips
bsv52 3.pdf pdf_icon

BSV52R

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor 1999 Apr 15 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 12 V). 1 base 2 emitter APPLICATIONS 3 collector High speed... See More ⇒

 9.3. Size:46K  st
bsv52 so2369 so2369a.pdf pdf_icon

BSV52R

BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 SO2369 N11 SO2369A N81 SILICON EPITAXIAL PLANAR NPN 2 TRANSISTORS MINIATURE PLASTIC PACKAGE FOR 3 APPLICATION IN SURFACE MOUNTING 1 CIRCUITS LOW CURRENT, FAST SWITCHING SOT-23 APPLICATIONS. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit SO2369/A BSV52 V Collector-Emi... See More ⇒

 9.4. Size:89K  fairchild semi
bsv52.pdf pdf_icon

BSV52R

BSV52 C E SOT-23 B Mark B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCES Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 5.0 V IC Collector C... See More ⇒

Otros transistores... BSV49 , BSV49A , BSV49B , BSV50E , BSV50F , BSV50G , BSV51 , BSV52 , 2SD718 , BSV53 , BSV53P , BSV54 , BSV54P , BSV55 , BSV55A , BSV55AP , BSV55P .

History: BSV55AP

 

 
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