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BSV52R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSV52R
   Código: B4
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 400 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO236
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BSV52R Datasheet (PDF)

 9.1. Size:79K  motorola
bsv52lt1.pdf pdf_icon

BSV52R

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSV52LT1/DSwitching TransistorBSV52LT1COLLECTORNPN Silicon31BASE23EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 12 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 20 VdcCollector Current Continuous IC 100 mAdcTHERMAL CHARACTER

 9.2. Size:50K  philips
bsv52 3.pdf pdf_icon

BSV52R

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSV52NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor BSV52FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 12 V).1 base2 emitterAPPLICATIONS3 collector High speed

 9.3. Size:46K  st
bsv52 so2369 so2369a.pdf pdf_icon

BSV52R

BSV52SO2369/SO2369ASMALL SIGNAL NPN TRANSISTORSType MarkingBSV52 B2SO2369 N11SO2369A N81 SILICON EPITAXIAL PLANAR NPN2TRANSISTORS MINIATURE PLASTIC PACKAGE FOR3APPLICATION IN SURFACE MOUNTING1CIRCUITS LOW CURRENT, FAST SWITCHINGSOT-23APPLICATIONS.INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSO2369/A BSV52V Collector-Emi

 9.4. Size:89K  fairchild semi
bsv52.pdf pdf_icon

BSV52R

BSV52CESOT-23BMark: B2NPN Switching TransistorThis device is designed for high speed saturated switching atcollector currents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCES Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 5.0 VIC Collector C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCR196F | CSC2274F | NJVMJD210T4G | 3DG12 | SD1726 | BD787G

 

 
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