2N317A Todos los transistores

 

2N317A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N317A
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 20 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2N317A

 

2N317A Datasheet (PDF)

 9.1. Size:12K  semelab
2n3174.pdf pdf_icon

2N317A

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:196K  inchange semiconductor
2n3171h.pdf pdf_icon

2N317A

isc Silicon PNP Power Transistor 2N3171H DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIM

 9.3. Size:173K  inchange semiconductor
2n3173.pdf pdf_icon

2N317A

isc Silicon PNP Power Transistor 2N3173 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C

 9.4. Size:173K  inchange semiconductor
2n3172.pdf pdf_icon

2N317A

isc Silicon PNP Power Transistor 2N3172 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C

Otros transistores... 2N3172 , 2N3173 , 2N3174 , 2N3175 , 2N3176 , 2N3177 , 2N3178 , 2N3179 , TIP41 , 2N3180 , 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 .

History: 2SA1015K

 

 
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