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2N3181 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3181
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 85 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO53

 Búsqueda de reemplazo de transistor bipolar 2N3181

 

2N3181 Datasheet (PDF)

 9.1. Size:171K  inchange semiconductor
2n3186.pdf

2N3181
2N3181

isc Silicon PNP Power Transistor 2N3186DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.2. Size:171K  inchange semiconductor
2n3184.pdf

2N3181
2N3181

isc Silicon PNP Power Transistor 2N3184DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.3. Size:171K  inchange semiconductor
2n3185.pdf

2N3181
2N3181

isc Silicon PNP Power Transistor 2N3185DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.4. Size:171K  inchange semiconductor
2n3183.pdf

2N3181
2N3181

isc Silicon PNP Power Transistor 2N3183DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Otros transistores... 2N3174 , 2N3175 , 2N3176 , 2N3177 , 2N3178 , 2N3179 , 2N317A , 2N3180 , TIP122 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , 2N3189 .

 

 
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