2N3181 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3181  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO53

  📄📄 Copiar 

 Búsqueda de reemplazo de 2N3181

- Selecciónⓘ de transistores por parámetros

 

2N3181 datasheet

 9.1. Size:171K  inchange semiconductor
2n3186.pdf pdf_icon

2N3181

isc Silicon PNP Power Transistor 2N3186 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.2. Size:171K  inchange semiconductor
2n3184.pdf pdf_icon

2N3181

isc Silicon PNP Power Transistor 2N3184 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.3. Size:171K  inchange semiconductor
2n3185.pdf pdf_icon

2N3181

isc Silicon PNP Power Transistor 2N3185 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.4. Size:171K  inchange semiconductor
2n3183.pdf pdf_icon

2N3181

isc Silicon PNP Power Transistor 2N3183 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Otros transistores... 2N3174, 2N3175, 2N3176, 2N3177, 2N3178, 2N3179, 2N317A, 2N3180, BC548, 2N3182, 2N3183, 2N3184, 2N3185, 2N3186, 2N3187, 2N3188, 2N3189