BSX63B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSX63B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 70 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar BSX63B
BSX63B Datasheet (PDF)
bsx62 bsx63.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX62; BSX63NPN switching transistors1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSX62; BSX63FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 base
bsx63smd.pdf
BSX63SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.
bsx62 bsx63.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can PackageNPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BSX62 BSX63 UNITSVCEOCollector Emitter Voltage 40 60 VVCESCollector Emitter Voltage 60 80 V
Otros transistores... BSX62B , BSX62C , BSX62D , BSX62SM , BSX63 , BSX63-10 , BSX63-16 , BSX63-6 , TIP2955 , BSX63C , BSX63D , BSX64 , BSX64-10 , BSX64-6 , BSX64C , BSX64SM , BSX66 .
