2N3208 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N3208
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 8.7 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar 2N3208

2N3208 Datasheet (PDF)

9.1. Size:327K general electric
2n319 2n320 2n321.pdf

9.2. Size:113K st
2n2894 2n3209.pdf

9.3. Size:11K semelab
2n3202.pdf

2N3202Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

9.4. Size:24K semelab
2n3209x.pdf

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI

9.5. Size:25K semelab
2n3209xcsm.pdf

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PA

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJE200G

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D