BU103A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU103A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO66

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BU103A datasheet

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BU103A

R BU103A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F

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BU103A

isc Silicon NPN Power Transistor BU103A DESCRIPTION Continuous Collector Current-I = 1A C Collector Power Dissipation- P = 30W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V

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BU103A

R BU103AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

 0.2. Size:105K  jdsemi
 bu103ah.pdf pdf_icon

BU103A

R BU103AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger and Switch-mode power supplies 2 2 2 FEATURES 2 High voltage capa

MOSTRAR MÁS

Otros transistores... BT930, BT930T, BU100, BU1008ADF, BU1008AF, BU100A, BU102, BU103, 2SA1837, BU104, BU104D, BU104DP, BU104P, BU105, BU105-02, BU106, BU107