BU2508A Todos los transistores

 

BU2508A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2508A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 90 pF
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar BU2508A

 

BU2508A Datasheet (PDF)

 ..1. Size:58K  philips
bu2508a 1.pdf

BU2508A BU2508A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resulti

 ..2. Size:175K  cn sptech
bu2508a.pdf

BU2508A BU2508A

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Co

 ..3. Size:216K  inchange semiconductor
bu2508a.pdf

BU2508A BU2508A

isc Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.1. Size:61K  philips
bu2508aw 1.pdf

BU2508A BU2508A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 0.2. Size:61K  philips
bu2508aw.pdf

BU2508A BU2508A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 0.3. Size:82K  philips
bu2508af.pdf

BU2508A BU2508A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

 0.4. Size:215K  inchange semiconductor
bu2508aw.pdf

BU2508A BU2508A

isc Silicon NPN Power Transistor BU2508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.5. Size:217K  inchange semiconductor
bu2508ax.pdf

BU2508A BU2508A

isc Silicon NPN Power Transistor BU2508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.6. Size:212K  inchange semiconductor
bu2508af.pdf

BU2508A BU2508A

isc Silicon NPN Power Transistor BU2508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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