BU2508D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2508D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 7
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BU2508D
BU2508D Datasheet (PDF)
bu2508d 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collector
bu2508d.pdf
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isc Silicon NPN Power Transistor BU2508DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
bu2508dx.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu2508dw.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto
bu2508df.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu2508dx.pdf
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isc Silicon NPN Power Transistor BU2508DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
bu2508dw.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2508DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
bu2508df.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2508DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .