BU2508DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2508DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 90 pF

Ganancia de corriente contínua (hFE): 7

Encapsulados: SOT199

 Búsqueda de reemplazo de BU2508DF

- Selecciónⓘ de transistores por parámetros

 

BU2508DF datasheet

 ..1. Size:72K  philips
bu2508df.pdf pdf_icon

BU2508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 ..2. Size:213K  inchange semiconductor
bu2508df.pdf pdf_icon

BU2508DF

isc Silicon NPN Power Transistor BU2508DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 7.1. Size:73K  philips
bu2508dx.pdf pdf_icon

BU2508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 7.2. Size:54K  philips
bu2508dw.pdf pdf_icon

BU2508DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collecto

Otros transistores... BU226, BU2506DF, BU2506DX, BU2507AF, BU2508A, BU2508AF, BU2508AX, BU2508D, BC558, BU2508DX, BU2520A, BU2520AF, BU2520AX, BU2520D, BU2520DF, BU2520DX, BU2522A