BU2522AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2522AF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 115 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: SOT199

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BU2522AF datasheet

 ..1. Size:260K  philips
 bu2522af.pdf pdf_icon

BU2522AF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 ..2. Size:248K  inchange semiconductor
 bu2522af.pdf pdf_icon

BU2522AF

isc Silicon NPN Power Transistor BU2522AF DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VA

 7.1. Size:58K  philips
 bu2522aw 1.pdf pdf_icon

BU2522AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI

 7.2. Size:55K  philips
 bu2522a 1.pdf pdf_icon

BU2522AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAM

MOSTRAR MÁS

Otros transistores... BU2508DX, BU2520A, BU2520AF, BU2520AX, BU2520D, BU2520DF, BU2520DX, BU2522A, TIP42, BU2522AX, BU2525A, BU2525AF, BU2525AX, BU2527A, BU2527AF, BU2527AX, BU284