BU2522AF Specs and Replacement
Type Designator: BU2522AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 115 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: SOT199
BU2522AF Substitution
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BU2522AF datasheet
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isc Silicon NPN Power Transistor BU2522AF DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VA... See More ⇒
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI... See More ⇒
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAM... See More ⇒
Detailed specifications: BU2508DX, BU2520A, BU2520AF, BU2520AX, BU2520D, BU2520DF, BU2520DX, BU2522A, TIP42, BU2522AX, BU2525A, BU2525AF, BU2525AX, BU2527A, BU2527AF, BU2527AX, BU284
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