All Transistors. BU2522AF Datasheet

 

BU2522AF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU2522AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 115 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: SOT199

 BU2522AF Transistor Equivalent Substitute - Cross-Reference Search

   

BU2522AF Datasheet (PDF)

 ..1. Size:260K  philips
bu2522af.pdf

BU2522AF BU2522AF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 ..2. Size:248K  inchange semiconductor
bu2522af.pdf

BU2522AF BU2522AF

isc Silicon NPN Power Transistor BU2522AFDESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofhigh resolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VA

 7.1. Size:58K  philips
bu2522aw 1.pdf

BU2522AF BU2522AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foruse in horizontal deflection circuits of pc monitors.QUI

 7.2. Size:55K  philips
bu2522a 1.pdf

BU2522AF BU2522AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARAM

 7.3. Size:216K  inchange semiconductor
bu2522ax.pdf

BU2522AF BU2522AF

isc Silicon NPN Power Transistor BU2522AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of pcmonitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

 7.4. Size:119K  inchange semiconductor
bu2522a.pdf

BU2522AF BU2522AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2522A DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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