BU2527A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2527A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 145 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO218

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BU2527A datasheet

 ..1. Size:54K  philips
 bu2527a 1.pdf pdf_icon

BU2527A

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL P

 ..2. Size:212K  inchange semiconductor
 bu2527a.pdf pdf_icon

BU2527A

isc Silicon NPN Power Transistor BU2527A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen colour television receivers up to 64 KHz. ABSOLUTE MAXIMUM RATINGS(T =25 )

 0.1. Size:55K  philips
 bu2527af 2.pdf pdf_icon

BU2527A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA S

 0.2. Size:56K  philips
 bu2527aw 1.pdf pdf_icon

BU2527A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARA

MOSTRAR MÁS

Otros transistores... BU2520DF, BU2520DX, BU2522A, BU2522AF, BU2522AX, BU2525A, BU2525AF, BU2525AX, S9013, BU2527AF, BU2527AX, BU284, BU287, BU289, BU306F, BU307F, BU308