All Transistors. BU2527A Datasheet

 

BU2527A Datasheet and Replacement


   Type Designator: BU2527A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 145 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO218
 

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BU2527A Datasheet (PDF)

 ..1. Size:54K  philips
 bu2527a 1.pdf pdf_icon

BU2527A

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL P

 ..2. Size:212K  inchange semiconductor
 bu2527a.pdf pdf_icon

BU2527A

isc Silicon NPN Power Transistor BU2527ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largescreen colour television receivers up to 64 KHz.ABSOLUTE MAXIMUM RATINGS(T =25)

 0.1. Size:55K  philips
 bu2527af 2.pdf pdf_icon

BU2527A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS

 0.2. Size:56K  philips
 bu2527aw 1.pdf pdf_icon

BU2527A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TN5142 | 2SA1576AR-R

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