BU2527A Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2527A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 145 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO218
BU2527A Transistor Equivalent Substitute - Cross-Reference Search
BU2527A Datasheet (PDF)
bu2527a 1.pdf
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL P
bu2527a.pdf
isc Silicon NPN Power Transistor BU2527ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largescreen colour television receivers up to 64 KHz.ABSOLUTE MAXIMUM RATINGS(T =25)
bu2527af 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527aw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA
bu2527aw.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA
bu2527ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527af.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527ax.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AX DESCRIPTION With TO-3PML package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25)
bu2527af.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C
bu2527ax.pdf
isc Silicon NPN Power Transistor BU2527AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bu2527aw.pdf
isc Silicon NPN Power Transistor BU2527AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
bu2527af.pdf
isc Silicon NPN Power Transistor BU2527AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
