BU323 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon Darlington NPN Power Transistor BU323DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Order this documentMOTOROLAby BU323A/DSEMICONDUCTOR TECHNICAL DATABU323ANPN Silicon Power Darlington16 AMPERE PEAKTransistorPOWER TRANSISTORDARLINGTON NPNThe BU323A is a monolithic darlington transistor designed for automotive ignition,SILICONswitching regulator and motor control applications.400 VOLTSCOLLECTOR VCE Sat Specified at 40_C = 2.0 V Max. at IC = 6

Order this documentMOTOROLAby BU323AP/DSEMICONDUCTOR TECHNICAL DATABU323APNPN Silicon Darlington PowerDARLINGTONTransistorNPN SILICONPOWER TRANSISTORThe BU323AP is a monolithic darlington transistor designed for automotive ignition,400 VOLTSswitching regulator and motor control applications.125 WATTS CollectorEmitter Sustaining Voltage COLLECTORVCER(sus)

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BU323ZDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regu

isc Silicon NPN Power Transistor BU323ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)DARLINGTONHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor BU323PDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon Darlington NPN Power Transistor BU323APDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN