Справочник транзисторов. BU323

 

Биполярный транзистор BU323 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU323
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 350 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO3

 Аналоги (замена) для BU323

 

 

BU323 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
bu323.pdf

BU323
BU323

isc Silicon Darlington NPN Power Transistor BU323DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 0.1. Size:239K  motorola
bu323are.pdf

BU323
BU323

Order this documentMOTOROLAby BU323A/DSEMICONDUCTOR TECHNICAL DATABU323ANPN Silicon Power Darlington16 AMPERE PEAKTransistorPOWER TRANSISTORDARLINGTON NPNThe BU323A is a monolithic darlington transistor designed for automotive ignition,SILICONswitching regulator and motor control applications.400 VOLTSCOLLECTOR VCE Sat Specified at 40_C = 2.0 V Max. at IC = 6

 0.2. Size:218K  motorola
bu323apr.pdf

BU323
BU323

Order this documentMOTOROLAby BU323AP/DSEMICONDUCTOR TECHNICAL DATABU323APNPN Silicon Darlington PowerDARLINGTONTransistorNPN SILICONPOWER TRANSISTORThe BU323AP is a monolithic darlington transistor designed for automotive ignition,400 VOLTSswitching regulator and motor control applications.125 WATTS CollectorEmitter Sustaining Voltage COLLECTORVCER(sus)

 0.3. Size:218K  motorola
bu323zre.pdf

BU323
BU323

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 0.4. Size:200K  motorola
bu323zrev8.pdf

BU323
BU323

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 0.5. Size:215K  inchange semiconductor
bu323z.pdf

BU323
BU323

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BU323ZDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regu

 0.6. Size:209K  inchange semiconductor
bu323a.pdf

BU323
BU323

isc Silicon NPN Power Transistor BU323ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)DARLINGTONHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

 0.7. Size:224K  inchange semiconductor
bu323p.pdf

BU323
BU323

isc Silicon NPN Darlington Power Transistor BU323PDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.8. Size:219K  inchange semiconductor
bu323ap.pdf

BU323
BU323

isc Silicon Darlington NPN Power Transistor BU323APDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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