BU407D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BU406DBU407DSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FORMONOCHROME TV 321 TO-220DESCRIPTION The BU406D and BU407D are silicon planarepitaxial NPN transistors with integrated damperdiode, in Jedec TO-220 plastic package. Theyare fast switching, devices for us

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TVs and CTVs circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 moun

isc Silicon NPN Power Transistor BU407DDESCRIPTIONHigh Voltage: V = 330V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXI

Order this documentMOTOROLAby BU406/DSEMICONDUCTOR TECHNICAL DATABU406BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontal deflectionoutput stages of TVs and CRTs.7 AMPERESNPN SILICON High Voltage: VCEV = 330 or 400 VPOWER TRANSISTORS Fast Switching Speed: tf = 750 ns (max)

BU407FISILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTORAPPLICATIONS HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU407FI is a silicon epitaxial planar NPN3transistors in ISOWATT220 plastic package. 21It is a fast switching, high voltage device for usein horizontal deflection output stages of mediumISOWATT220and small screens MTV receivers w

BU407/407HHigh Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collec

BU407/407H NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 330 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current IB 4

BU406, BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontaldeflection output stages of TVs and CRTs.Features High Voltagewww.onsemi.com Fast Switching Speed Low Saturation VoltageNPN SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS7 AMPERES - 60 WATTSMAXIMUM RATINGS150 AND 200 VOLT

UNISONIC TECHNOLOGIES CO., LTD BU407 NPN SILICON TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN epitaxial planar transistor, 1designed for use in TV Horizontal output and switching applications. TO-220 FEATURES * High breakdown voltage Lead-free: BU407L Halogen-free: BU407G ORDERING INFORMATION Ordering Number Pin Assignment P

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS BU406BU407TO-220Plastic PackageHorizontal Deflection Output Stages of TV and CRTABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BU406 BU407 UNITCollector Emitter Voltage VCEO 200 150 VCollector Base Voltage VCBO 400 330 VVCEVCollector Emitter Volta

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION High Voltage Fast Switching Speed- : toff= 0.75s (Max) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) S

isc Silicon NPN Power Transistor BU407DESCRIPTIONHigh Voltage: V = 330V(Min)CEVFast Switching Speed-: t = 750ns(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistors BU406FI/407FIDESCRIPTIONHigh VoltageLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor BU407HDESCRIPTIONHigh Voltage: V = 330V(Min)CEVFast Switching Speed-: t = 750ns(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMU