BU408 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU408

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 5

Encapsulados: TOP66

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BU408 datasheet

 ..1. Size:45K  fairchild semi
 bu406 bu406h bu408 bu406 bu408.pdf pdf_icon

BU408

BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co

 ..2. Size:61K  samsung
 bu406 bu406 bu406h bu408 sam.pdf pdf_icon

BU408

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current

 ..3. Size:212K  inchange semiconductor
 bu408.pdf pdf_icon

BU408

isc Silicon NPN Power Transistor BU408 DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 400ns(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM

 0.1. Size:213K  inchange semiconductor
 bu408d.pdf pdf_icon

BU408

isc Silicon NPN Power Transistor BU408D DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM

MOSTRAR MÁS

Otros transistores... BU406D, BU406F, BU406H, BU407, BU407D, BU407F, BU407FI, BU407H, BD139, BU408D, BU409, BU410, BU411, BU412, BU413, BU414, BU414B