BU408 - параметры, поиск аналогов, даташиты транзистора

BU408 Datasheet (PDF)

..1. Size:45K fairchild semi
bu406 bu406h bu408 bu406 bu408.pdf pdf_icon

BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co

..2. Size:61K samsung
bu406 bu406 bu406h bu408 sam.pdf pdf_icon

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current

..3. Size:212K inchange semiconductor
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isc Silicon NPN Power Transistor BU408DESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 400ns(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM

0.1. Size:213K inchange semiconductor
bu408d.pdf pdf_icon

isc Silicon NPN Power Transistor BU408DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.5s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIM

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .