BU4508AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU4508AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: SOT199
Búsqueda de reemplazo de transistor bipolar BU4508AF
BU4508AF Datasheet (PDF)
bu4508af hg 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU4508AFSilicon Diffused Power TransistorProduct specification June 1998Supersedes data of January 1998File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon Diffused Power Transistor BU4508AFGENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl
bu4508az 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load
bu4508ax 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Featuresexceptional tolerance to base drive and collector curr
bu4508ax.pdf
isc Silicon NPN Power Transistor BU4508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High-voltage high-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of CTVreceivers and p.c monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GES5127
History: GES5127
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050